HIN232, HIN236, HIN237, HIN238, HIN239, HIN240, HIN241
Die Characteristics
DIE DIMENSIONS
PASSIVATION
160 mils x 140 mils
Type: Nitride over Silox
Nitride Thickness: 8kÅ
Silox Thickness: 7kÅ
METALLIZATION
Type: Al
Thickness: 10kÅ ±1kÅ
TRANSISTOR COUNT
238
SUBSTRATE POTENTIAL
PROCESS
V+
CMOS Metal Gate
Metallization Mask Layout
HIN240
T2
OUT
T1
T3
T4
R3
R3
OUT
T5
IN
OUT
OUT
OUT
IN
R2
IN
SHUTDOWN
R2
OUT
EN
T2
T1
IN
IN
T5
OUT
R4
R1
IN
OUT
R4
R1
OUT
IN
T4
T3
IN
GND
IN
R5
OUT
V
CC
R5
IN
C1+
V+
C1-
C2+
C2-
V-
13