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AS7C3364FT32B-10TQI 参数 Datasheet PDF下载

AS7C3364FT32B-10TQI图片预览
型号: AS7C3364FT32B-10TQI
PDF下载: 下载PDF文件 查看货源
内容描述: [Standard SRAM, 64KX32, 10ns, CMOS, PQFP100, 14 X 20 MM, TQFP-100]
分类和应用: 静态存储器内存集成电路
文件页数/大小: 19 页 / 417 K
品牌: ISSI [ INTEGRATED SILICON SOLUTION, INC ]
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AS7C3364FT32B  
AS7C3364FT36B  
®
Absolute maximum ratings  
Parameter  
Symbol  
Min  
–0.5  
–0.5  
–0.5  
Max  
+4.6  
+ 0.5  
Unit  
V
Power supply voltage relative to GND  
Input voltage relative to GND (input pins)  
Input voltage relative to GND (I/O pins)  
Power dissipation  
V
, V  
DD DDQ  
V
V
V
IN  
DD  
V
V
+ 0.5  
V
IN  
DDQ  
P
1.8  
W
D
DC output current  
I
50  
mA  
°C  
°C  
OUT  
Storage temperature (plastic)  
Temperature under bias  
T
–65  
–65  
+150  
+135  
stg  
T
bias  
Note: Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other con-  
ditions outside those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions may affect reliability.  
Recommended operating conditions at 3.3V I/O  
Parameter  
Supply voltage for inputs  
Supply voltage for I/O  
Ground supply  
Symbol  
VDD  
Min  
3.135  
3.135  
0
Nominal  
Max  
3.465  
3.465  
0
Unit  
V
3.3  
3.3  
0
VDDQ  
Vss  
V
V
Recommended operating conditions at 2.5V I/O  
Parameter  
Supply voltage for inputs  
Supply voltage for I/O  
Ground supply  
Symbol  
Min  
3.135  
2.375  
0
Nominal  
Max  
3.465  
2.625  
0
Unit  
V
VDD  
VDDQ  
Vss  
3.3  
2.5  
0
V
V
2/8/05; v.1.2  
Alliance Semiconductor  
P. 8 of 19  
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