AS7C3364FT32B
AS7C3364FT36B
®
Absolute maximum ratings
Parameter
Symbol
Min
–0.5
–0.5
–0.5
–
Max
+4.6
+ 0.5
Unit
V
Power supply voltage relative to GND
Input voltage relative to GND (input pins)
Input voltage relative to GND (I/O pins)
Power dissipation
V
, V
DD DDQ
V
V
V
IN
DD
V
V
+ 0.5
V
IN
DDQ
P
1.8
W
D
DC output current
I
–
50
mA
°C
°C
OUT
Storage temperature (plastic)
Temperature under bias
T
–65
–65
+150
+135
stg
T
bias
Note: Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other con-
ditions outside those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions may affect reliability.
Recommended operating conditions at 3.3V I/O
Parameter
Supply voltage for inputs
Supply voltage for I/O
Ground supply
Symbol
VDD
Min
3.135
3.135
0
Nominal
Max
3.465
3.465
0
Unit
V
3.3
3.3
0
VDDQ
Vss
V
V
Recommended operating conditions at 2.5V I/O
Parameter
Supply voltage for inputs
Supply voltage for I/O
Ground supply
Symbol
Min
3.135
2.375
0
Nominal
Max
3.465
2.625
0
Unit
V
VDD
VDDQ
Vss
3.3
2.5
0
V
V
2/8/05; v.1.2
Alliance Semiconductor
P. 8 of 19
ISSI [ INTEGRATED SILICON SOLUTION, INC ]
