AS7C33512PFS16A
AS7C33512PFS18A
®
TQFP thermal resistance
Description
Thermal resistance
(junction to ambient)
1
Thermal resistance
(junction to top of case)
1
1 This parameter is sampled.
Conditions
1–layer
Test conditions follow standard test methods
and procedures for measuring thermal
impedance, per EIA/JESD51
4–layer
Symbol
θ
JA
θ
JA
θ
JC
Typical
40
22
8
Units
°
C/W
°
C/W
°
C/W
DC electrical characteristics
–166
Parameter
Input leakage
current
1
Output leakage
current
Operating power
supply current
Operating power
supply current
Symbol
|I
LI
|
|I
LO
|
I
CC2
(Pipelined)
I
CC2
(Flow-
Through)
–150
–133
–100
Test conditions
V
DD
= Max, V
IN
= GND to V
DD
OE
≥
V
IH
, V
DD
= Max,
V
OUT
= GND to V
DD
CE0 = V
IL
, CE1 = V
IH
, CE2 = V
IL
,
f = f
Max
, I
OUT
= 0 mA
CE0 = V
IL
, CE1 = V
IH
, CE2 = V
IL
,
f = f
Max
, I
OUT
= 0 mA
Deselected, f = f
Max
, ZZ
≤
V
IL
Deselected, f = 0, ZZ
≤
0.2V
all V
IN
≤
0.2V or
≥
V
DD
– 0.2V
Deselected, f = f
Max
, ZZ
≥
V
DD
– 0.2V
All V
IN
≤
V
IL
or
≥
V
IH
I
OL
= 8 mA, V
DDQ
= 3.465V
I
OH
= –4 mA, V
DDQ
= 3.135V
Min Max Min Max Min Max Min Max Unit
–
–
–
–
–
–
–
–
2.4
2
2
475
325
130
30
30
0.4
–
–
–
–
–
–
–
–
–
2.4
2
2
450
325
110
30
30
0.4
–
–
–
–
–
–
–
–
–
2.4
2
2
425
300
100
30
30
0.4
–
–
–
–
–
–
–
–
–
2.4
2
2
325
300
90
30
30
0.4
–
V
mA
µA
µA
mA
mA
I
SB
Standby power
supply current
I
SB1
I
SB2
Output voltage
V
OL
V
OH
1 LBO pin has an internal pull-up and input leakage = ±10
µA.
2 I
CC
given with no output loading. I
CC
increases with faster cycle times and greater output loading.
DC electrical characteristics for 2.5V I/O operation
–166
Parameter
Output leakage
current
Output voltage
Symbol
|I
LO
|
V
OL
V
OH
Test conditions
OE
≥
V
IH
, V
DD
= Max,
V
OUT
= GND to V
DD
I
OL
= 2 mA, V
DDQ
= 2.65V
I
OH
= –2 mA, V
DDQ
= 2.35V
–150
–133
–100
Min Max Min Max Min Max Min Max Unit
–1
–
1.7
1
0.7
–
–1
–
1.7
1
0.7
–
–1
–
1.7
1
0.7
–
–1
–
1.7
1
0.7
–
µA
V
4/15/02; v.1.5
Alliance Semiconductor
7 of 14
ISSI [ INTEGRATED SILICON SOLUTION, INC ]
