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AS7C33512NTF36A-75TQIN 参数 Datasheet PDF下载

AS7C33512NTF36A-75TQIN图片预览
型号: AS7C33512NTF36A-75TQIN
PDF下载: 下载PDF文件 查看货源
内容描述: [ZBT SRAM, 512KX36, 7.5ns, CMOS, PQFP100, 14 X 20 MM, LEAD FREE, TQFP-100]
分类和应用: ISM频段静态存储器内存集成电路
文件页数/大小: 19 页 / 420 K
品牌: ISSI [ INTEGRATED SILICON SOLUTION, INC ]
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AS7C33512NTF32A/36A  
®
Burst order  
Interleaved burst order (LBO = 1)  
A1 A0 A1 A0 A1 A0 A1 A0  
Linear burst order (LBO = 0)  
A1 A0 A1 A0 A1 A0 A1 A0  
Starting address  
First increment  
Second increment  
Third increment  
0 0  
0 1  
1 0  
1 1  
0 1  
0 0  
1 1  
1 0  
1 0  
1 1  
0 0  
0 1  
1 1  
1 0  
0 1  
0 0  
Starting Address  
First increment  
Second increment  
Third increment  
0 0  
0 1  
1 0  
1 1  
0 1  
1 0  
1 1  
0 0  
1 0  
1 1  
0 0  
0 1  
1 1  
0 0  
0 1  
1 0  
Synchronous truth table[5,6,7,8,9,11]  
Address  
OE CEN source  
CE0 CE1 CE2 ADV/LD R/W  
BWn  
CLK  
Operation  
DQ  
Notes  
H
X
X
X
L
X
X
L
X
H
X
X
L
L
L
L
H
L
H
L
H
L
H
L
X
X
X
X
H
X
H
X
L
X
X
X
X
X
X
X
X
L
X
X
X
X
L
L
L
L
L
L
L
L
L
L
L
L
NA  
NA  
NA  
NA  
L to H  
L to H  
L to H  
L to H  
DESELECT Cycle  
DESELECT Cycle  
DESELECT Cycle  
High-Z  
High-Z  
High-Z  
High-Z  
Q
X
H
X
H
X
H
X
H
CONTINUE DESELECT Cycle  
READ Cycle (Begin Burst)  
READ Cycle (Continue Burst)  
1
External L to H  
Next L to H  
X
L
X
L
L
Q
1,10  
2
H
H
X
X
X
External L to H NOP/DUMMY READ (Begin Burst) High-Z  
X
L
X
L
Next L to H DUMMY READ (Continue Burst) High-Z 1,2,10  
External L to H  
WRITE CYCLE (Begin Burst)  
D
D
3
X
L
X
L
X
L
L
Next L to H WRITE CYCLE (Continue Burst)  
1,3,10  
H
External L to H NOP/WRITE ABORT (Begin Burst) High-Z 2,3  
1,2,3,  
X
X
X
H
X
H
X
X
L
Next L to H WRITE ABORT (Continue Burst)  
High-Z  
10  
X
X
X
X
X
X
H
Current L to H  
INHIBIT CLOCK  
-
4
Key: X = Don’t Care, H = HIGH, L = LOW. BWn = H means all byte write signals (BWa, BWb, BWc, and BWd) are HIGH. BWn = L means one or  
more byte write signals are LOW.  
Notes:  
1 CONTINUE BURST cycles, whether READ or WRITE, use the same control inputs. The type of cycle performed (READ or WRITE) is chose in the initial  
BEGIN BURST cycle. A CONINUE DESELECT cycle can only be entered if a DESELECT CYCLE is executed first.  
2 DUMMY READ and WRITE ABORT cycles can be considered NOPs because the device performs no external operation. A WRITE ABORT means a  
WRITE command is given, but no operation is performed.  
3 OE may be wired LOW to minimize the number of control signal to the SRAM. The device will automatically turn off the output drivers during a WRITE  
cycle. OE may be used when the bus turn-on and turn-off times do not meet an application’s requirements.  
4 If an INHIBIT CLOCK command occurs during a READ operation, the DQ bus will remain active (Low-Z). If it occurs during a WRITE cycle, the bus will  
remain in High-Z. No WRITE operations will be performed during the INHIBIT CLOCK cycle.  
5 BWa enables WRITEs to byte “a” (DQa pins); BWb enables WRITEs to byte “b” (DQb pins); BWc enables WRITEs to byte “c” (DQc pins); BWd  
enables WRITEs to byte “d” (DQd pins).  
6 All inputs except OE and ZZ must meet setup and hold times around the rising edge (LOW to HIGH) of CLK.  
7 Wait states are inserted by setting CEN HIGH.  
8 This device contains circuitry that will ensure that the outputs will be in High-Z during power-up.  
9 The device incorporates a 2-bit burst counter. Address wraps to the initial address every fourth BURST CYCLE.  
10 The address counter is incremented for all CONTINUE BURST cycles.  
11 ZZ pin is always Low in this truth table.  
11/9/05, v 1.4  
Alliance Semiconductor  
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