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AS7C33512NTD36A-133TQCN 参数 Datasheet PDF下载

AS7C33512NTD36A-133TQCN图片预览
型号: AS7C33512NTD36A-133TQCN
PDF下载: 下载PDF文件 查看货源
内容描述: [ZBT SRAM, 512KX36, 3.8ns, CMOS, PQFP100, 14 X 20 MM, LEAD FREE, TQFP-100]
分类和应用: 时钟静态存储器内存集成电路
文件页数/大小: 18 页 / 425 K
品牌: ISSI [ INTEGRATED SILICON SOLUTION, INC ]
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AS7C33512NTD32A/36A  
®
State diagram for NTD SRAM  
Burst  
Read  
Burs  
Read  
Burst  
Read  
Dsel  
Dsel  
Burst  
Burst  
Write  
Burst  
Burst  
Write  
Writ  
Absolute maximum ratings  
Parameter  
Power supply voltage relative to GND  
Input voltage relative to GND (input pins)  
Input voltage relative to GND (I/O pins)  
Power dissipation  
Symbol  
DD, VDDQ  
VIN  
Min  
–0.5  
–0.5  
–0.5  
Max  
+4.6  
Unit  
V
V
VDD + 0.5  
VDDQ + 0.5  
1.8  
V
VIN  
V
Pd  
W
Short circuit output current  
IOUT  
Tstg  
20  
mA  
oC  
oC  
Storage temperature  
–65  
–65  
+150  
Temperature under bias  
Tbias  
+135  
Stresses greater than those listed under “Absolute maximum ratings” may cause permanent damage to the device. This is a stress rating only, and functional  
operation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to  
absolute maximum rating conditions may affect reliability.  
Recommended operating conditions at 3.3V I/O  
Parameter  
Supply voltage for inputs  
Supply voltage for I/O  
Ground supply  
Symbol  
Min  
3.135  
3.135  
0
Nominal  
Max  
3.465  
VDD  
0
Unit  
V
VDD  
3.3  
3.3  
0
*
VDDQ  
V
Vss  
V
*
VDDQ cannot be greater than VDD  
Recommended operating conditions at 2.5V I/O  
Parameter  
Supply voltage for inputs  
Supply voltage for I/O  
Ground supply  
Symbol  
Min  
3.135  
2.375  
0
Nominal  
Max  
3.465  
VDD  
0
Unit  
V
VDD  
3.3  
2.5  
0
*
VDDQ  
V
Vss  
V
*
VDDQ cannot be greater than VDD  
4/21/05, v 2.8  
Alliance Semiconductor  
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