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AS7C33512NTD36A-100TQI 参数 Datasheet PDF下载

AS7C33512NTD36A-100TQI图片预览
型号: AS7C33512NTD36A-100TQI
PDF下载: 下载PDF文件 查看货源
内容描述: [ZBT SRAM, 512KX36, 8.5ns, CMOS, PQFP100, 14 X 20 MM, TQFP-100]
分类和应用: 静态存储器内存集成电路
文件页数/大小: 19 页 / 380 K
品牌: ISSI [ INTEGRATED SILICON SOLUTION, INC ]
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DC electrical characteristics for 3.3V I/O operation
250
Parameter
Output leakage
current
Operating power
supply current
Sym
Test conditions
OE
V
IH,
V
DD
= Max,
V
out
= GND to V
DD
CE = V
IL
, CE = V
IH
, CE = V
IL
,
f
=
f
max,
I
out
= 0 mA
Deselected,
f
=
f
max
Deselected,
f
=
0,
all V
IN
0.2V or
V
DD
- 0.2V
Deselected, f = f
Max
,
ZZ
V
DD
- 0.2V
All V
IN
V
IL
or
V
IH
I
OL
= 8 mA, V
DDQ
= 3.6V
I
OH
= –4 mA, V
DDQ
= 3.0V
2.0
0.4
2.0
0.4
2.4
0.4
1.7
0.7
V
V
Min
Max
200
Min
Max
166
Min
Max
Min
100
Max
Unit
µA
µA
mA
mA
mA
Input leakage current
1
| I
LI
| V
DD
= Max, V
in
= GND to V
DD
| I
LO
|
I
CC
I
SB
Standby power supply
current
2
I
SB1
I
SB2
V
OL
V
OH
2
2
400
160
30
2
2
400
160
30
2
2
350
120
30
2
2
230
70
30
30
30
30
30
mA
Output voltage
1 I
CC
given with no output loading. I
CC
increases with faster cycle times and greater output loading.
2 LBO pin has an internal pull-up and input leakage = ±10 mA.
DC electrical characteristics for 2.5V I/O operation
250
Parameter
Output leakage
current
Output voltage
Sym
|
I
LO
|
200
Max
Min
Max
Min
166
Max
Min
100
Max
Test conditions
OE
V
IH,
V
DD
= Max,
V
out
= GND to V
DD
I
OL
= 2 mA, V
DDQ
= 2.65V
I
OH
= –2 mA, V
DDQ
= 2.35V
Min
Unit
µA
V
-1
1.7
1
0.7
-1
1.7
1
0.7
-1
1.7
1
0.7
-1
1.7
1
0.7
V
OL
V
OH
 Y
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