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AS7C33512FT18A-75TQCN 参数 Datasheet PDF下载

AS7C33512FT18A-75TQCN图片预览
型号: AS7C33512FT18A-75TQCN
PDF下载: 下载PDF文件 查看货源
内容描述: [Standard SRAM, 512KX18, 7.5ns, CMOS, PQFP100, LEAD FREE, TQFP-100]
分类和应用: 静态存储器
文件页数/大小: 19 页 / 506 K
品牌: ISSI [ INTEGRATED SILICON SOLUTION, INC ]
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AS7C33512FT18A  
®
Absolute maximum ratings  
Parameter  
Power supply voltage relative to GND  
Input voltage relative to GND (input pins)  
Input voltage relative to GND (I/O pins)  
Power dissipation  
Symbol  
DD, VDDQ  
VIN  
Min  
–0.5  
–0.5  
–0.5  
Max  
Unit  
V
V
+4.6  
VDD + 0.5  
VDDQ + 0.5  
1.8  
V
VIN  
V
Pd  
W
Short circuit output current  
IOUT  
Tstg  
20  
mA  
oC  
oC  
Storage temperature  
–65  
–65  
+150  
Temperature under bias  
Tbias  
+135  
Stresses greater than those listed under “Absolute maximum ratings” may cause permanent damage to the device. This is a stress rating only, and functional  
operation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to abso-  
lute maximum rating conditions may affect reliability.  
Recommended operating conditions at 3.3V I/O  
Parameter  
Supply voltage for inputs  
Supply voltage for I/O  
Ground supply  
Symbol  
VDD  
Min  
3.135  
3.135  
0
Nominal  
Max  
3.465  
3.465  
0
Unit  
V
3.3  
3.3  
0
VDDQ  
Vss  
V
V
Recommended operating conditions at 2.5V I/O  
Parameter  
Supply voltage for inputs  
Supply voltage for I/O  
Ground supply  
Symbol  
VDD  
Min  
3.135  
2.375  
0
Nominal  
Max  
3.465  
2.625  
0
Unit  
V
3.3  
2.5  
0
VDDQ  
Vss  
V
V
11/30/04, v 1.1  
Alliance Semiconductor  
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