AS7C332MNTD18A
®
State diagram for NTD SRAM
Read
Burst
Read
Read
Ds
el
Re
ad
Burst
Read
Dsel
Burst
Dsel
Dsel
Burst
R
ea
W
rit
e
Read
Write
Write
Write
d
el
Ds
ite
Wr
Burst
Write
Burst
Write
Dsel
Burst
Absolute maximum ratings
Parameter
Power supply voltage relative to GND
Input voltage relative to GND (input pins)
Input voltage relative to GND (I/O pins)
Power dissipation
Short circuit output current
Storage temperature (TQFP)
Storage temperature (BGA)
Temperature under bias
Symbol
V
DD
, V
DDQ
V
IN
V
IN
P
d
I
OUT
T
stg
(TQFP)
T
stg
(BGA)
T
bias
Min
–0.5
–0.5
–0.5
–
–
–65
–65
–65
Max
+4.6
V
DD
+ 0.5
V
DDQ
+ 0.5
1.8
20
+150
+125
+135
Unit
V
V
V
W
mA
o
C
o
C
o
C
Stresses greater than those listed under
Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress rating only, and functional
operation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to
absolute maximum rating conditions may affect reliability.
Recommended operating conditions at 3.3V I/O
Parameter
Supply voltage for inputs
Supply voltage for I/O
Ground supply
Symbol
V
DD
V
DDQ
Vss
Min
3.135
3.135
0
Nominal
3.3
3.3
0
Max
3.465
3.465
0
Unit
V
V
V
Recommended operating conditions at 2.5V I/O
Parameter
Supply voltage for inputs
Supply voltage for I/O
Ground supply
Symbol
V
DD
V
DDQ
Vss
Min
3.135
2.375
0
Nominal
3.3
2.5
0
Max
3.465
2.625
0
Unit
V
V
V
4/26/04, V 1.2
Alliance Semiconductor
P. 7 of 22
ISSI [ INTEGRATED SILICON SOLUTION, INC ]
