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AS7C332MNTD18A-167BCN 参数 Datasheet PDF下载

AS7C332MNTD18A-167BCN图片预览
型号: AS7C332MNTD18A-167BCN
PDF下载: 下载PDF文件 查看货源
内容描述: [ZBT SRAM, 2MX18, 7.5ns, CMOS, PBGA165, LEAD FREE, BGA-165]
分类和应用: 静态存储器内存集成电路
文件页数/大小: 22 页 / 452 K
品牌: ISSI [ INTEGRATED SILICON SOLUTION, INC ]
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AS7C332MNTD18A
®
DC electrical characteristics for 3.3V I/O operation
Parameter
Input leakage current
1
Output leakage current
Input high (logic 1) voltage
Input low (logic 0) voltage
Output high voltage
Output low voltage
Sym
|I
LI
|
|I
LO
|
V
IH
V
IL
V
OH
V
OL
Conditions
V
DD
= Max, OV < V
IN
< V
DD
OE
V
IH
, V
DD
= Max, OV < V
OUT
< V
DDQ
Address and control pins
I/O pins
Address and control pins
I/O pins
I
OH
= –4 mA, V
DDQ
= 3.135V
I
OL
= 8 mA, V
DDQ
= 3.465V
Min
-2
-2
2
2
-0.3
*
-0.5
*
2.4
Max
2
2
V
DD
+0.3
V
DDQ
+0.3
0.8
0.8
0.4
Unit
µA
µA
V
V
V
V
1 FT, LBO, and ZZ pins and the 165 BGA JTAG pins (TMS, TDI, and TCK) have an internal pull-up or pull-down, and input leakage = ±10
µA.
DC electrical characteristics for 2.5V I/O operation
Parameter
Input leakage current
Output leakage current
Input high (logic 1) voltage
Input low (logic 0) voltage
Output high voltage
Output low voltage
*
V min
IL
Sym
|I
LI
|
|I
LO
|
V
IH
V
IL
V
OH
V
OL
Conditions
V
DD
= Max, OV < V
IN
< V
DD
OE
V
IH
, V
DD
= Max, OV < V
OUT
< V
DDQ
Address and control pins
I/O pins
Address and control pins
I/O pins
I
OH
= –4 mA, V
DDQ
= 2.375V
I
OL
= 8 mA, V
DDQ
= 2.625V
Min
-2
-2
1.7
1.7
-0.3
*
-0.3
*
1.7
Max
2
2
V
DD
+0.3
V
DDQ
+0.3
0.7
0.7
0.7
Unit
µA
µA
V
V
V
V
V
V
= -1.5 for pulse width less than 0.2 X t
CYC
I
DD
operating conditions and maximum limits
Parameter
Operating power supply
current
1
(pipelined mode)
Operating power supply
current
2
(flow-through
mode)
Sym
I
CC
I
CC
(FT)
I
SB
Standby power supply
current
I
SB1
I
SB2
Deselected,
f
=
f
max,
ZZ
<
V
IL
Deselected,
f
=
0,
,
ZZ
<
0.2V
all V
IN
0.2V or
V
DD
- 0.2V
Deselected, f = f
Max
,
ZZ
V
DD
- 0.2V,
all V
IN
V
IL
or
V
IH
CE
0
= V
IL
, CE
1
= V
IH
, CE
2
= V
IL
,
f
=
f
max,
I
out
= 0 mA
Test conditions
-200
400
325
120
70
60
-167
350
280
110
70
60
-133
325
260
100
70
mA
60
Unit
mA
mA
1
I
CC
given with no output loading. I
CC
increases with faster cycle times and greater output loading.
4/26/04, V 1.2
Alliance Semiconductor
P. 8 of 22