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AS7C33256PFD32A-166TQI 参数 Datasheet PDF下载

AS7C33256PFD32A-166TQI图片预览
型号: AS7C33256PFD32A-166TQI
PDF下载: 下载PDF文件 查看货源
内容描述: [Standard SRAM, 256KX32, 3.5ns, CMOS, PQFP100, 14 X 20 MM, TQFP-100]
分类和应用: 时钟静态存储器内存集成电路
文件页数/大小: 20 页 / 527 K
品牌: ISSI [ INTEGRATED SILICON SOLUTION, INC ]
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AS7C33256PFD32A  
AS7C33256PFD36A  
®
Write enable truth table (per byte)  
Function  
GWE BWE  
BWa  
X
BWb  
X
BWc  
BWd  
X
L
H
H
H
H
H
X
L
L
L
H
L
X
L
Write All Bytes  
L
L
L
Write Byte a  
L
H
H
L
H
Write Byte c and d  
H
H
L
X
X
X
H
X
Read  
H
H
H
Key: X = don’t care, L = low, H = high, n = a, b, c, d; BWE, BWn = internal write signal.  
Asynchronous Truth Table  
Operation  
Snooze mode  
ZZ  
H
L
OE  
X
I/O Status  
High-Z  
L
Dout  
Read  
L
H
High-Z  
Write  
L
X
Din, High-Z  
High-Z  
Deselected  
L
X
Burst order table  
Interleaved Burst Order (LBO=1)  
A1 A0 A1 A0 A1 A0 A1 A0  
Linear Burst Order (LBO=0)  
A1 A0 A1 A0 A1 A0 A1 A0  
Starting Address  
First increment  
0 0  
0 1  
1 0  
1 1  
0 1  
0 0  
1 1  
1 0  
1 0  
1 1  
0 0  
0 1  
1 1  
1 0  
0 1  
0 0  
Starting Address  
First increment  
0 0  
0 1  
1 0  
1 1  
0 1  
1 0  
1 1  
0 0  
1 0  
1 1  
0 0  
0 1  
1 1  
0 0  
0 1  
1 0  
Second increment  
Third increment  
Second increment  
Third increment  
12/1/04, v.1.2  
Alliance Semiconductor  
P. 6 of 20  
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