AS7C33256NTF32A
AS7C33256NTF36A
®
State Diagram for NTD SRAM
Burst
Read
Burst
Read
Read
Burst
Read
Dsel
Dsel
Burst
Burst
Write
Burst
Write
Write
Write
Burst
1
Absolute maximum ratings
Parameter
Symbol
, V
Min
–0.5
–0.5
–0.5
–
Max
Unit
V
Power supply voltage relative to GND
V
+4.6
DD
DDQ
Input voltage relative to GND (input pins)
Input voltage relative to GND (I/O pins)
Power dissipation
V
V
+ 0.5
DD
V
IN
IN
V
V
+ 0.5
V
DDQ
P
1.8
W
D
DC output current
I
–
50
mA
OUT
o
Storage temperature (plastic)
Temperature under bias (Junction)
T
–65
–65
+150
+150
C
stg
o
T
C
bias
1 Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to
absolute maximum rating conditions may affect reliability.
Recommended operating conditions at 3.3V I/O
Parameter
Supply voltage for inputs
Supply voltage for I/O
Ground supply
Symbol
VDD
Min
3.135
3.135
0
Nominal
Max
3.465
3.465
0
Unit
V
3.3
3.3
0
VDDQ
Vss
V
V
Recommended operating conditions at 2.5V I/O
Parameter
Supply voltage for inputs
Supply voltage for I/O
Ground supply
Symbol
VDD
Min
3.135
2.375
0
Nominal
Max
3.465
2.625
0
Unit
V
3.3
2.5
0
VDDQ
Vss
V
V
11/8/04, v. 1.1
Alliance Semiconductor
P. 7 of 18
ISSI [ INTEGRATED SILICON SOLUTION, INC ]
