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AS7C331MPFS18A-250TQC 参数 Datasheet PDF下载

AS7C331MPFS18A-250TQC图片预览
型号: AS7C331MPFS18A-250TQC
PDF下载: 下载PDF文件 查看货源
内容描述: [Standard SRAM, 1MX18, 6.5ns, CMOS, PQFP100, 14 X 20 MM, TQFP-100]
分类和应用: 静态存储器内存集成电路
文件页数/大小: 21 页 / 411 K
品牌: ISSI [ INTEGRATED SILICON SOLUTION, INC ]
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AS7C331MPFS18A  
®
AC test conditions  
• Output load: For t , t  
, t  
, t , see Figure C. For all others, see Figure B.  
LZC LZOE HZOE HZC  
• Input pulse level: GND to 3V. See Figure A.  
Thevenin equivalent:  
• Input rise and fall time (measured at 0.3V and 2.7V): 2 ns. See Figure A.  
• Input and output timing reference levels: 1.5V.  
+3.3V for 3.3V I/ O;  
/ +2.5V for 2.5V I/ O  
319Ω/1667Ω  
Z = 50  
50  
0
D
OUT  
V = 1.5V  
+3.0V  
L
D
OUT  
90%  
10%  
90%  
10%  
5 pF*  
for 3.3V I/ O;  
V = V / 2  
353Ω/1538Ω  
30 pF*  
L
DDQ  
GND  
*including scope  
and jig capacitance  
GND  
for 2.5V I/ O  
Figure A: Input waveform  
Figure B: Output load (A)  
Figure C: Output load(B)  
Notes  
1
2
3
4
5
6
For test conditions, see “AC Test Conditions”, Figures A, B, and C.  
This parameter is measured with output load condition in Figure C.  
This parameter is sampled but not 100% tested.  
t
t
is less than t  
, and t  
LZOE  
is less than t at any given temperature and voltage.  
HZC LZC  
HZOE  
CH  
is measured as high above VIH, and t is measured as low below VIL.  
CL  
This is a synchronous device. All addresses must meet the specified setup and hold times for all rising edges of CLK. All other synchronous inputs must meet  
the setup and hold times for all rising edges of CLK when chip is enabled.  
7
8
Write refers to GWE, BWE, and BW[a,b]  
Chip select refers to CE0, CE1, and CE2.  
.
12/ 2/ 02, v. 0.9.2 Advance Info  
Alliance Semiconductor  
19 of 21  
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