AS7C331MPFS18A
®
Absolute maximum ratings
Parameter
Power supply voltage relative to GND
Input voltage relative to GND (input pins)
Input voltage relative to GND (I/O pins)
Power dissipation
DC output current
Storage temperature (plastic)
Temperature under bias
Symbol
V
DD
, V
DDQ
V
IN
V
IN
P
D
I
OUT
T
stg
T
bias
Min
–0.5
–0.5
–0.5
–
–
–65
–65
Max
+4.6
V
DD
+ 0.5
V
DDQ
+ 0.5
1.8
20 mA
+150
+135
Unit
V
V
V
W
mA
o
C
o
C
Note: Stresses greater than those listed in this table may cause permanent damage to the device. This is a stress rating only, and functional operation of the device
at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating con-
ditions may affect reliability.
Recommended operating conditions
Parameter
Supply voltage
3.3V I/O supply voltage
2.5V I/O supply voltage
Address and
control pins
I/O pins
Ambient operating temperature
Symbol
V
DD
V
SS
V
DDQ
V
SSQ
V
DDQ
V
SSQ
V
IH
V
IL
V
IH
V
IL
T
A
Min
3.135
0.0
3.135
0.0
2.35
0.0
2.0
–0.3
2
2.0
–0.5
0
Nominal
3.3
0.0
3.3
0.0
2.5
0.0
–
–
–
–
–
Max
3.6
0.0
3.6
0.0
2.9
0.0
V
DD
+ 0.3
0.8
V
DDQ
+ 0.3
0.8
70
Unit
V
V
V
V
V
°
C
Input
voltages
1
1
Input voltage ranges apply to 3.3V I/O operation. For 2.5V I/O operation, contact factory for input specifications.
2 V
IL
min = –2.0V for pulse width less than 0.2 × t
RC
.
12/2/02, v. 0.9.2 Advance Info
Alliance Semiconductor
6 of 21
ISSI [ INTEGRATED SILICON SOLUTION, INC ]
