AS7C331MPFD32A
AS7C331MPFD36A
®
AC test conditions
• Output load: For tLZC, tLZOE, tHZOE, tHZC, see Figure C. For all others, see Figure B.
• Input pulse level: GND to 3V. See Figure A.
Thevenin equivalent:
• Input rise and fall time (measured at 0.3V and 2.7V): 2 ns. See Figure A.
• Input and output timing reference levels: 1.5V.
+3.3V for 3.3V I/O;
/+2.5V for 2.5V I/O
319Ω/1667Ω
Z0 = 50Ω
50
Ω
DOUT
VL = 1.5V
for 3.3V I/O;
= VDDQ/2
+3.0V
DOUT
5 pF*
90%
10%
90%
10%
353Ω/1538Ω
30 pF*
GND *including scope
and jig capacitance
GND
for 2.5V I/O
Figure C: Output load(B)
Figure A: Input waveform
Figure B: Output load (A)
Notes
1
2
3
4
5
6
For test conditions, see “AC test conditions”, Figures A, B, and C.
This parameter is measured with output load condition in Figure C.
This parameter is sampled but not 100% tested.
t
HZOE is less than tLZOE, and tHZC is less than tLZC at any given temperature and voltage.
tCH is measured as high if above VIH, and tCL is measured as low if below VIL.
This is a synchronous device. All addresses must meet the specified setup and hold times for all rising edges of CLK. All other synchronous inputs must
meet the setup and hold times for all rising edges of CLK when chip is enabled.
7
8
Write refers to GWE
,
BWE, and BW[a:d].
CE1, and CE2
Chip select refers to CE0
,
.
2/10/05, v.1.1
Alliance Semiconductor
16 of 19
ISSI [ INTEGRATED SILICON SOLUTION, INC ]
