$6&017'$
DC electrical characteristics for 3.3V I/O operation
250
Parameter
Output leakage
current
Operating power
supply current
2
Sym
Test conditions
V
DD
= Max, V
in
= GND to V
DD
OE
≥
V
IH,
V
DD
= Max,
V
out
= GND to V
DD
CE = V
IL
, CE = V
IH
, CE = V
IL
,
f
=
f
max,
I
out
= 0 mA
Deselected,
f
=
f
max
Deselected,
f
=
0,
all V
IN
≤
0.2V or
≥
V
DD
- 0.2V
Deselected, f = f
Max
,
ZZ
≥
V
DD
- 0.2V,
all V
IN
≤
V
IL
or
≥
V
IH
I
OL
= 8 mA, V
DDQ
= 3.6V
I
OH
= –4 mA, V
DDQ
= 3.0V
Min
Max
Min
225
Max
200
Min
Max
166
Min
Max
Unit
µA
µA
mA
Input leakage current
1
| I
LI
|
| I
LO
|
I
CC
I
SB
Standby power supply
current
I
SB1
I
SB2
Output voltage
V
OL
V
OH
-2
-2
–
–
–
–
–
2.4
2
2
425
110
70
60
0.4
–
-2
-2
–
–
–
–
–
2.4
2
2
400
110
70
60
0.4
–
-2
-2
–
–
–
–
–
2.4
2
2
370
110
70
60
0.4
–
-2
-2
–
–
–
–
–
2.4
2
2
340
90
70
mA
60
0.4
–
V
V
1 LBO, FTX, and ZZX pins and the 165 BGA JTAG pins (TMSX, TDIX, and TCKX)have an internal pull-up, and input leakage = ±10
µA.
2
I
CC
given with no output loading. I
CC
increases with faster cycle times and greater output loading.
DC electrical characteristics for 2.5V I/O operation
250
Parameter
Output leakage
current
Output voltage
Sym
|
I
LO
|
225
Max
Min
Max
Min
200
Max
Min
166
Max
Test conditions
OE
≥
V
IH,
V
DD
= Max,
V
out
= GND to V
DD
I
OL
= 2 mA, V
DDQ
= 2.65V
I
OH
= –2 mA, V
DDQ
= 2.35V
Min
Unit
µA
V
-1
–
1.7
1
0.7
–
-1
–
1.7
1
0.7
–
-1
–
1.7
1
0.7
–
-1
–
1.7
1
0.7
–
V
OL
V
OH
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ISSI [ INTEGRATED SILICON SOLUTION, INC ]
