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AS7C331MFT18A-85TQC 参数 Datasheet PDF下载

AS7C331MFT18A-85TQC图片预览
型号: AS7C331MFT18A-85TQC
PDF下载: 下载PDF文件 查看货源
内容描述: [Standard SRAM, 1MX18, 8.5ns, CMOS, PQFP100, 14 X 20 MM, TQFP-100]
分类和应用: 时钟静态存储器内存集成电路
文件页数/大小: 19 页 / 512 K
品牌: ISSI [ INTEGRATED SILICON SOLUTION, INC ]
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AS7C331MFT18A
®
DC electrical characteristics for 3.3V I/O operation
Parameter
Input leakage current
Output leakage current
Input high (logic 1) voltage
Sym
|I
LI
|
|I
LO
|
V
IH
V
IL
V
OH
V
OL
Conditions
V
DD
= Max, 0V < V
IN
< V
DD
OE
V
IH
, V
DD
= Max, 0V < V
OUT
< V
DDQ
Address and control pins
I/O pins
Address and control pins
I/O pins
I
OH
= –4 mA, V
DDQ
= 3.135V
I
OL
= 8 mA, V
DDQ
= 3.465V
Min
-2
-2
2*
2*
-0.3**
-0.5**
2.4
Max
2
2
V
DD
+0.3
V
DDQ
+0.3
0.8
0.8
0.4
Unit
µA
µA
V
Input low (logic 0) voltage
Output high voltage
Output low voltage
V
V
V
DC electrical characteristics for 2.5V I/O operation
Parameter
Input leakage current
Output leakage current
Input high (logic 1) voltage
Sym
|I
LI
|
|I
LO
|
V
IH
V
IL
V
OH
V
OL
Conditions
V
DD
= Max, 0V < V
IN
< V
DD
OE
V
IH
, V
DD
= Max, 0V < V
OUT
< V
DDQ
Address and control pins
I/O pins
Address and control pins
I/O pins
I
OH
= –4 mA, V
DDQ
= 2.375V
I
OL
= 8 mA, V
DDQ
= 2.625V
Min
-2
-2
1.7*
1.7*
-0.3**
-0.3**
1.7
Max
2
2
V
DD
+0.3
V
DDQ
+0.3
0.7
0.7
0.7
Unit
µA
µA
V
V
V
V
V
V
Input low (logic 0) voltage
Output high voltage
Output low voltage
† LBO and ZZ pins have an internal pull-up or pull-down, and input leakage = ±10
µA.
*
V
IH
max < VDD +1.5V for pulse width less than 0.2 X t
CYC
**
V
IL
min = -1.5 for pulse width less than 0.2 X t
CYC
I
DD
operating conditions and maximum limits
Parameter
Operating power supply current
1
Sym
I
CC
I
SB
Standby power supply current
I
SB1
I
SB2
Conditions
CE0 < V
IL
, CE1 > V
IH
, CE2 < V
IL
, f = f
Max
,
I
OUT
= 0 mA, ZZ
<
V
IL
All V
IN
0.2V or > V
DD
– 0.2V, Deselected,
f = f
Max
, ZZ
<
V
IL
Deselected, f = 0, ZZ
<
0.2V,
all V
IN
0.2V or
V
DD
– 0.2V
Deselected, f = f
Max
, ZZ
V
DD
– 0.2V,
all V
IN
V
IL
or
V
IH
-68
Max
285
90
60
50
Typ
225
70
40
30
-75
Max
275
90
60
50
-85
Max
250
80
60
50
-10
Max
230
80
60
50
mA
Unit
mA
1 I
CC
given with no output loading. I
CC
increases with faster cycle times and greater output loading.
1/21/05, v 1.4
Alliance Semiconductor
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