欢迎访问ic37.com |
会员登录 免费注册
发布采购

AS7C331MFT18A-10TQI 参数 Datasheet PDF下载

AS7C331MFT18A-10TQI图片预览
型号: AS7C331MFT18A-10TQI
PDF下载: 下载PDF文件 查看货源
内容描述: [Standard SRAM, 1MX18, 10ns, CMOS, PQFP100, 14 X 20 MM, TQFP-100]
分类和应用: 静态存储器内存集成电路
文件页数/大小: 19 页 / 512 K
品牌: ISSI [ INTEGRATED SILICON SOLUTION, INC ]
 浏览型号AS7C331MFT18A-10TQI的Datasheet PDF文件第1页浏览型号AS7C331MFT18A-10TQI的Datasheet PDF文件第2页浏览型号AS7C331MFT18A-10TQI的Datasheet PDF文件第3页浏览型号AS7C331MFT18A-10TQI的Datasheet PDF文件第4页浏览型号AS7C331MFT18A-10TQI的Datasheet PDF文件第6页浏览型号AS7C331MFT18A-10TQI的Datasheet PDF文件第7页浏览型号AS7C331MFT18A-10TQI的Datasheet PDF文件第8页浏览型号AS7C331MFT18A-10TQI的Datasheet PDF文件第9页  
AS7C331MFT18A
®
Signal descriptions
Signal
CLK
A,A0,A1
DQ[a,b]
CE0
CE1, CE2
ADSP
ADSC
ADV
GWE
BWE
BW[a,b]
OE
LBO
ZZ
NC
I/O Properties
I
I
I/O
I
I
I
I
I
I
I
I
I
I
I
-
CLOCK
SYNC
SYNC
SYNC
SYNC
SYNC
SYNC
SYNC
SYNC
SYNC
SYNC
ASYNC
STATIC
ASYNC
-
Description
Clock. All inputs except OE, ZZ, and LBO are synchronous to this clock.
Address. Sampled when all chip enables are active and when ADSC or ADSP are asserted.
Data. Driven as output when the chip is enabled and when OE is active.
Master chip enable. Sampled on clock edges when ADSP or ADSC is active. When CE0 is
inactive, ADSP is blocked. Refer to the “Synchronous truth table” for more information.
Synchronous chip enables. Active high and active LOW, respectively. Sampled on clock edges
when ADSC is active or when CE0 and ADSP are active.
Address strobe processor. Asserted LOW to load a new bus address or to enter standby mode.
Address strobe controller. Asserted LOW to load a new address or to enter standby mode.
Advance. Asserted LOW to continue burst read/write.
Global write enable. Asserted LOW to write all 32/36 and 18 bits. When HIGH, BWE and
BW[a,b] control write enable.
Byte write enable. Asserted LOW with GWE HIGH to enable effect of BW[a,b] inputs.
Write enables. Used to control write of individual bytes when GWE is HIGH and BWE is
LOW. If any of BW[a,b] is active with GWE HIGH and BWE LOW, the cycle is a write cycle.
If all BW[a,b] are inactive, the cycle is a read cycle.
Asynchronous output enable. I/O pins are driven when OE is active and the chip is in read
mode.
Selects Burst mode. When tied to V
DD
or left floating, device follows interleaved Burst order. When
driven LOW, device follows linear Burst order.
This signal is internally pulled HIGH.
Sleep. Places device in low power mode; data is retained. Connect to GND if unused.
No connect
Snooze Mode
SNOOZE MODE is a low current, power-down mode in which the device is deselected and current is reduced to I
SB2
. The duration of
SNOOZE MODE is dictated by the length of time the ZZ is in a High state.
The ZZ pin is an asynchronous, active high input that causes the device to enter SNOOZE MODE.
When the ZZ pin becomes a logic High, I
SB2
is guaranteed after the time t
ZZI
is met. After entering SNOOZE MODE, all inputs except ZZ is
disabled and all outputs go to High-Z. Any operation pending when entering SNOOZE MODE is not guaranteed to successfully complete.
Therefore, SNOOZE MODE (READ or WRITE) must not be initiated until valid pending operations are completed. Similarly, when exiting
SNOOZE MODE during t
PUS
, only a DESELECT or READ cycle should be given while the SRAM is transitioning out of SNOOZE MODE.
1/21/05, v 1.4
Alliance Semiconductor
5 of 19