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AS7C25512PFS36A-200TQI 参数 Datasheet PDF下载

AS7C25512PFS36A-200TQI图片预览
型号: AS7C25512PFS36A-200TQI
PDF下载: 下载PDF文件 查看货源
内容描述: [Standard SRAM, 512KX36, 7.5ns, CMOS, PQFP100, 14 X 20 MM, TQFP-100]
分类和应用: 静态存储器内存集成电路
文件页数/大小: 21 页 / 458 K
品牌: ISSI [ INTEGRATED SILICON SOLUTION, INC ]
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AS7C25512PFS32A  
AS7C25512PFS36A  
®
AC test conditions  
• Output load: For t , t  
, t  
, t , see Figure C. For all others, see Figure B.  
LZC LZOE HZOE HZC  
• Input pulse level: GND to 3V. See Figure A.  
Thevenin equivalent:  
• Input rise and fall time (measured at 0.3V and 2.7V): 2 ns. See Figure A.  
• Input and output timing reference levels: 1.5V.  
+2.5V  
319Ω/1667Ω  
Z = 50  
50  
0
D
OUT  
+3.0V  
D
V = V / 2  
L DDQ  
OUT  
5 pF*  
90%  
10%  
90%  
10%  
353Ω/1538Ω  
30 pF*  
GND  
*including scope  
and jig capacitance  
GND  
Figure C: Output load(B)  
Figure A: Input waveform  
Figure B: Output load (A)  
Notes  
1
2
3
4
5
6
For test conditions, see “AC test conditions”, Figures A, B, and C.  
This parameter is measured with output load condition in Figure C.  
This parameter is sampled but not 100% tested.  
t
t
is less than t  
, and t  
LZOE  
is less than t at any given temperature and voltage.  
HZC LZC  
HZOE  
CH  
is measured as high if above VIH, and t is measured as low if below VIL.  
CL  
This is a synchronous device. All addresses must meet the specified setup and hold times for all rising edges of CLK. All other synchronous inputs must meet  
the setup and hold times for all rising edges of CLK when chip is enabled.  
Write refers to GWE, BWE, and BW[a:d].  
7
8
Chip select refers to CE0, CE1, and CE2.  
12/ 2/ 02, v. 0.9.1  
Alliance Semiconductor  
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