AS7C252MFT18A
®
DC electrical characteristics
Parameter
Input leakage current†
Output leakage current
Sym
Conditions
VDD = Max, 0V < VIN < VDD
OE ≥ VIH, VDD = Max, 0V < VOUT < VDDQ
Address and control pins
I/O pins
Min
-2
Max
Unit
µA
µA
V
|ILI|
2
2
|ILO
|
-2
1.7*
1.7*
-0.3**
-0.3**
1.7
VDD+0.3
Input high (logic 1) voltage
VIH
VIL
V
DDQ+0.3
V
Address and control pins
I/O pins
0.7
0.7
–
V
Input low (logic 0) voltage
Output high voltage
V
VOH
VOL
IOH = –4 mA, VDDQ = 2.375V
IOL = 8 mA, VDDQ = 2.625V
V
Output low voltage
–
0.7
V
†
LBO and ZZ pins have an internal pull-up or pull-down, and input leakage = ±10 µA.
*
V
max < VDD +1.5V for pulse width less than 0.2 X t
CYC
IH
**
V
min = -1.5 for pulse width less than 0.2 X t
CYC
IL
IDD operating conditions and maximum limits
Parameter
Sym
Conditions
-75
-85
-10
Unit
CE0 < VIL, CE1 > VIH, CE2 < VIL, f = fMax
,
Operating power supply current1
ICC
325
130
300
275
mA
IOUT = 0 mA, ZZ < VIL
All VIN ≤ 0.2V or >
V
– 0.2V, Deselected,
DD
ISB
130
130
f = fMax, ZZ < VIL
Deselected, f = 0, ZZ < 0.2V,
all VIN ≤ 0.2V or ≥ VDD – 0.2V
Standby power supply current
mA
ISB1
ISB2
90
80
90
80
90
80
Deselected, f = f , ZZ
≥
V
– 0.2V,
DD
Max
all VIN ≤ VIL or ≥ VIH
1 I given with no output loading. I increases with faster cycle times and greater output loading.
CC
CC
1/17/05, v 1.2
Alliance Semiconductor
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