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AS7C252MFT18A-10TQI 参数 Datasheet PDF下载

AS7C252MFT18A-10TQI图片预览
型号: AS7C252MFT18A-10TQI
PDF下载: 下载PDF文件 查看货源
内容描述: [Standard SRAM, 2MX18, 10ns, CMOS, PQFP100, 14 X 20 MM, TQFP-100]
分类和应用: 静态存储器内存集成电路
文件页数/大小: 19 页 / 508 K
品牌: ISSI [ INTEGRATED SILICON SOLUTION, INC ]
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AS7C252MFT18A  
®
AC test conditions  
• Output load: For tLZC, tLZOE, tHZOE, tHZC, see Figure C. For all others, see Figure B.  
• Input pulse level: GND to 2.5V. See Figure A.  
Thevenin equivalent:  
• Input rise and fall time (measured at 0.25V and 2.25V): 2 ns. See Figure A.  
• Input and output timing reference levels: 1.25V.  
+2.5V  
319Ω/1667Ω  
Z0 = 50Ω  
50Ω  
DOUT  
VL = VDDQ/2  
+2.5V  
DOUT  
5 pF*  
90%  
10%  
90%  
10%  
353Ω/1538Ω  
30 pF*  
GND *including scope  
and jig capacitance  
GND  
Figure C: Output load(B)  
Figure A: Input waveform  
Figure B: Output load (A)  
Notes  
1
2
3
4
5
6
For test conditions, see “AC test conditions”, Figures A, B, and C.  
This parameter is measured with output load condition in Figure C.  
This parameter is sampled but not 100% tested.  
t
t
HZOE is less than tLZOE, and tHZC is less than tLZC at any given temperature and voltage.  
CH is measured as high if above VIH, and tCL is measured as low if below VIL.  
This is a synchronous device. All addresses must meet the specified setup and hold times for all rising edges of CLK. All other synchronous inputs must  
meet the setup and hold times for all rising edges of CLK when chip is enabled.  
7
8
Write refers to GWE  
,
BWE, and BW[a,b].  
CE1, and CE2  
Chip select refers to CE0  
,
.
1/17/05, v 1.2  
Alliance Semiconductor  
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