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AS7C251MPFS18A-225BI 参数 Datasheet PDF下载

AS7C251MPFS18A-225BI图片预览
型号: AS7C251MPFS18A-225BI
PDF下载: 下载PDF文件 查看货源
内容描述: [Standard SRAM, 1MX18, 6.9ns, CMOS, PBGA165, BGA-165]
分类和应用: 静态存储器内存集成电路
文件页数/大小: 21 页 / 410 K
品牌: ISSI [ INTEGRATED SILICON SOLUTION, INC ]
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AS7C251MPFS18A  
®
DC electrical characteristics  
–250  
–225  
–200  
–166  
Parameter  
Sym  
Test conditions  
VDD = Max, VIN = GND to VDD  
OE V , VDD = Max,  
Min Max Min Max Min Max Min Max Unit  
Input leakage  
current1  
| ILI|  
–1  
2
1
–1  
2
1
–1  
2
1
–1  
2
1
µA  
µA  
Output leakage  
current  
IH  
| ILO  
|
VOUT = GND to VDD  
ICC  
(Pipelined)  
ICC  
Operating power  
supply current2  
425  
400  
370  
340 mA  
CE0 = V , CE1 = V , CE2 = V ,  
IL  
IH  
IL  
f = fMax, IOUT = 0 mA  
Operating power  
supply current  
250  
110  
225  
110  
200  
110  
175 mA  
90  
(Flow-through)  
ISB  
Deselected, f = fMax, ZZ V  
IL  
Deselected, f = 0, ZZ 0.2V  
ISB1  
all V 0.2V  
or (VDD, VDDQ) – 0.2V  
70  
30  
70  
30  
70  
30  
70  
IN  
Standby power  
supply current  
mA  
Deselected, f = f  
,
Max  
ISB2  
ZZ  
(V , VDDQ  
)
– 0.2V  
30  
DD  
IN  
All V V or V  
IL  
IH  
V
IOL = 2 mA, VDDQ = 2.65V  
IOH = –2 mA, VDDQ = 2.35V  
0.7  
0.7  
0.7  
0.7  
V
OL  
Output voltage  
V
1.7  
1.7  
1.7  
1.7  
OH  
1 LBO pin has an internal pull-up, and input leakage = ±10 µa.  
2 I given with no output loading. ICC increases with faster cycle times and greater output loading.  
CC  
12/ 2/ 02, v. 0.9.2 Advance Info  
Alliance Semiconductor  
7 of 21  
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