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AS7C251MNTF32A-75TQIN 参数 Datasheet PDF下载

AS7C251MNTF32A-75TQIN图片预览
型号: AS7C251MNTF32A-75TQIN
PDF下载: 下载PDF文件 查看货源
内容描述: [ZBT SRAM, 1MX32, 7.5ns, CMOS, PQFP100, 14 X 20 MM, LEAD FREE, TQFP-100]
分类和应用: 静态存储器
文件页数/大小: 18 页 / 414 K
品牌: ISSI [ INTEGRATED SILICON SOLUTION, INC ]
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AS7C251MNTF32A/36A  
®
DC electrical characteristics  
Parameter  
Input leakage current†  
Output leakage current  
Sym  
Conditions  
VDD = Max, 0V < VIN < VDD  
OE VIH, VDD = Max, 0V < VOUT < VDDQ  
Address and control pins  
I/O pins  
Min  
-2  
Max  
Unit  
µA  
µA  
V
|ILI|  
2
2
|ILO  
|
-2  
1.7*  
1.7*  
-0.3**  
-0.3**  
1.7  
VDD+0.3  
Input high (logic 1) voltage  
Input low (logic 0) voltage  
VIH  
VIL  
V
DDQ+0.3  
V
Address and control pins  
I/O pins  
0.7  
0.7  
V
V
Output high voltage  
Output low voltage  
VOH  
VOL  
IOH = –4 mA, VDDQ = 2.375V  
IOL = 8 mA, VDDQ = 2.625V  
V
0.7  
V
† LBO and ZZ pins have an internal pull-up or pull-down, and input leakage = ±10 µA.  
*VIH max < VDD +1.5V for pulse width less than 0.2 X tCYC  
**  
V
min = -1.5 for pulse width less than 0.2 X tCYC  
IL  
IDD operating conditions and maximum limits  
Parameter  
Sym  
Conditions  
-75  
-85  
-10  
Unit  
CE0 < VIL, CE1 > VIH, CE2 < VIL, f = fMax  
,
Operating power supply current1  
ICC  
325  
140  
300  
275  
IOUT = 0 mA, ZZ < VIL  
All VIN 0.2V or >  
V
– 0.2V, Deselected,  
DD  
ISB  
130  
130  
f = fMax, ZZ < VIL  
mA  
Deselected, f = 0, ZZ < 0.2V,  
all VIN 0.2V or VDD – 0.2V  
Standby power supply current  
ISB1  
ISB2  
90  
80  
90  
80  
90  
80  
Deselected, f = f , ZZ  
V
– 0.2V,  
Max  
DD  
all VIN VIL or VIH  
1 I given with no output loading. I increases with faster cycle times and greater output loading.  
CC  
CC  
12/23/04, v 1.1  
Alliance Semiconductor  
P. 8 of 18