AS7C251MNTD32A
AS7C251MNTD36A
®
DC electrical characteristics
Parameter
Input leakage current†
Output leakage current
Sym
|ILI|
Conditions
VDD = Max, 0V < VIN < VDD
OE ≥ VIH, VDD = Max, 0V < VOUT < VDDQ
Address and control pins
I/O pins
Min
-2
Max
Unit
µA
µA
V
2
|ILO
|
-2
2
VDD+0.3
VDDQ+0.3
0.7
1.7*
1.7*
-0.3**
-0.3**
1.7
Input high (logic 1) voltage
Input low (logic 0) voltage
VIH
V
Address and control pins
I/O pins
V
VIL
0.7
V
Output high voltage
Output low voltage
VOH
VOL
IOH = –4 mA, VDDQ = 2.375V
IOL = 8 mA, VDDQ = 2.625V
–
V
–
0.7
V
† LBO and ZZ pins have an internal pull-up or pull-down, and input leakage = ±10 µA.
*VIH max < VDD +1.5V for pulse width less than 0.2 X tCYC
**
V
min = -1.5 for pulse width less than 0.2 X tCYC
IL
IDD operating conditions and maximum limits
Parameter
Sym
Test conditions
CE0 < VIL, CE1 > VIH, CE2 < VIL, f = fMax
IOUT = 0 mA, ZZ < VIL
-200
-166
-133
Unit
,
Operating power supply
I
450
400
150
350
mA
1
CC
current
All VIN ≤ 0.2V or >
V
– 0.2V, Deselected,
DD
I
170
140
SB
f = fMax, ZZ < VIL
Standby power supply
current
Deselected, f = 0, ZZ < 0.2V,
all VIN ≤ 0.2V or ≥ VDD – 0.2V
mA
I
I
90
80
90
80
90
80
SB1
SB2
Deselected, f = f , ZZ
≥
V
– 0.2V,
DD
Max
all VIN ≤ VIL or ≥ VIH
1 I given with no output loading. I increases with faster cycle times and greater output loading.
CC
CC
1/17/05, V 1.2
Alliance Semiconductor
P. 8 of 18
ISSI [ INTEGRATED SILICON SOLUTION, INC ]
