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66WVC2M16ALL-7013BLI 参数 Datasheet PDF下载

66WVC2M16ALL-7013BLI图片预览
型号: 66WVC2M16ALL-7013BLI
PDF下载: 下载PDF文件 查看货源
内容描述: [2M X 16 PSEUDO STATIC RAM, 70 ns, PBGA54, 8 X 6 MM, MO-207, VFBGA-54]
分类和应用:
文件页数/大小: 67 页 / 1471 K
品牌: ISSI [ INTEGRATED SILICON SOLUTION, INC ]
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IS66WVC2M16ALL  
Advanced Information  
Burst Write Operation  
After CE# goes LOW, the address to access is latched on the rising edge of the next clock  
that ADV# is LOW. During this first clock rising edge, WE# indicates whether the operation  
is going to be a WRITE (WE# =LOW, Figure 3).  
Data is placed to the data bus (DQ0~DQ15) with consecutive clock cycles when WAIT de-asserts.  
The WAIT output asserts when a burst is initiated, and de-asserts to indicate when data  
is to be transferred into (or out of ) the memory. WAIT will again be asserted at the  
boundary of a row, unless wrapping within the burst length.  
A full 4 word synchronous write access is shown in Figure 3 and the AC characteristics are specified in  
Table 18.  
Figure 3. Synchronous Write Access Timing  
tCLK  
CLK  
VALID  
ADDRESS  
Address  
tSP  
tHD  
tSP  
tHD  
DQ0-  
DQ15  
DATA IN  
DATA IN  
DATA IN  
DATA IN  
tAS  
tAS  
ADV#  
tHD  
tCSP  
tCEM  
CE#  
tCBPH  
tSP tHD  
tHD  
UB#/LB#  
tHD  
tSP  
WE#  
tCEW  
tKHTL  
HiZ  
WAIT  
Write Burst Identified (WE#=LOW)  
10  
www.issi.com – SRAM@issi.com  
Rev.00B | March 2010