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41LV16100B-60KL 参数 Datasheet PDF下载

41LV16100B-60KL图片预览
型号: 41LV16100B-60KL
PDF下载: 下载PDF文件 查看货源
内容描述: 1M ×16 ( 16兆位)动态RAM与EDO页模式 [1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE]
分类和应用:
文件页数/大小: 22 页 / 145 K
品牌: ISSI [ INTEGRATED SILICON SOLUTION, INC ]
 浏览型号41LV16100B-60KL的Datasheet PDF文件第14页浏览型号41LV16100B-60KL的Datasheet PDF文件第15页浏览型号41LV16100B-60KL的Datasheet PDF文件第16页浏览型号41LV16100B-60KL的Datasheet PDF文件第17页浏览型号41LV16100B-60KL的Datasheet PDF文件第19页浏览型号41LV16100B-60KL的Datasheet PDF文件第20页浏览型号41LV16100B-60KL的Datasheet PDF文件第21页浏览型号41LV16100B-60KL的Datasheet PDF文件第22页  
®
ISSI  
IS41LV16100B  
CBR REFRESH CYCLE (Addresses; WE, OE = DON'T CARE)  
t
RP  
t
RAS  
t
RP  
t
RAS  
RAS  
t
CHR  
tCHR  
t
RPC  
CP  
tRPC  
t
t
CSR  
tCSR  
UCAS/LCAS  
Open  
I/O  
HIDDEN REFRESH CYCLE(1) (WE = HIGH; OE = LOW)  
t
RAS  
t
RAS  
t
RP  
RAS  
t
CRP  
t
RCD  
t
RSH  
tCHR  
UCAS/LCAS  
t
AR  
t
RAD  
t
RAL  
t
ASR  
t
RAH  
tCAH  
t
ASC  
ADDRESS  
Row  
Column  
t
AA  
t
RAC  
(2)  
OFF  
t
t
CAC  
t
CLZ  
Open  
Open  
Valid Data  
I/O  
t
OE  
tOD  
t
ORD  
OE  
Undefined  
Don’t Care  
Notes:  
1. A Hidden Refresh may also be performed after a Write Cycle. In this case, WE = LOW and OE = HIGH.  
2. tOFF is referenced from rising edge of RAS or CAS, whichever occurs last.  
18  
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774  
Rev. B  
04/13/05  
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