®
ISSI
IS41LV16100B
ABSOLUTE MAXIMUM RATINGS(1)
Symbol
VT
Parameters
Rating
–0.5 to +4.6
–0.5 to +4.6
50
Unit
V
Voltage on Any Pin Relative to GND
SupplyVoltage
3.3V
3.3V
VDD
IOUT
PD
V
OutputCurrent
mA
W
PowerDissipation
1
TA
CommercialOperationTemperature
IndustrialOperationTemperature
0 to +70
-40 to +85
°C
°C
TSTG
StorageTemperature
–55 to +125
°C
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent
damage to the device. This is a stress rating only and functional operation of the device at these
or any other conditions above those indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect
reliability.
RECOMMENDED OPERATING CONDITIONS (Voltages are referenced to GND.)
Symbol
VDD
Parameter
Min.
3.0
Typ.
3.3
—
Max.
3.6
Unit
V
SupplyVoltage
Input High Voltage
Input Low Voltage
3.3V
3.3V
3.3V
VIH
2.0
VDD + 0.3
0.8
V
VIL
–0.3
—
V
TA
CommercialAmbientTemperature
IndustrialAmbientTemperature
0
–40
—
—
70
85
°C
°C
CAPACITANCE(1,2)
Symbol
Parameter
Input Capacitance: A0-A9
Max.
Unit
pF
CIN1
CIN2
5
7
7
Input Capacitance: RAS, UCAS, LCAS, WE, OE
pF
CIO
Data Input/Output Capacitance: I/O0-I/O15
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: TA = 25°C, f = 1 MHz.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. B
5
04/13/05
ISSI [ INTEGRATED SILICON SOLUTION, INC ]
