IS22C040
BONDING DIAGRAM
BONDING PARAMETERS
Pin
1
2
3
6
7
8
9
10
11
12
13
14
Y
15
X
(0,0)
Note: Substrate must be connected to GND
Pad size = 100
µm
x 100
µm
5
4
3
2
1
20
19
18
17
16
ISSI
Name
S8
X
3451.9
3451.9
3451.9
3451.9
3368.10
137.18
100.4
100.4
100.4
100.4
100.4
100.4
100.4
100.4
187.05
3372.5
3451.9
3451.9
3451.9
3451.94
Y
1599.7
1861.0
2147.6
2444.5
2803.35
2795.93
2486.3
2245.0
1790.0
1469.5
1230.0
989.6
662.3
422.7
113.78
141.8
581.5
836.0
1090.6
1345.13
®
LED1
V
OUT1
V
OUT2
GND
STP
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
LED2
C
OUT
OSC
S5
S6
V
PP
S1
S2
V
CC
S3
S4
SBT
IRP
S7
DC CHARACTERISTICS
Symbol
V
CC
I
SB
I
OP
V
IH
V
IL
I
OH
I
OL
I
CO
I
STPH
T
STPL
I
LED
∆F/F
Parameter Description
Operating Voltage
Standby Current
Operating Current
Input HIGH Voltage
Input LOW Voltage
V
OUT
LOW O/P Current
V
OUT
HIGH O/P Current
C
OUT
O/P Current
STP LOW O/P Current
STP HIGH O/P Current
Output Current LED
Frequency Stability
V
CC
= 3.0V, I/O Open
Vcc = 3.0V, I/O Open
Vcc = 3.0V
Vcc = 3.0V
Vcc = 3.0V, V
OUT
= 0V
Vcc = 3.0V, V
OUT
= 3.0V
Vcc = 3.0V, V
COUT
= 0.7V
Vcc = 3.0V, V
STP
= 0V
Vcc = 3.0V, V
STP
= 3.0V
Vcc = 3.0V – 6.0V
F
OSC
(3V) – F
OSC
(3.5V)
F
OSC
(3V)
Condition
Min.
3.0
—
—
2.5
–0.3
—
—
—
—
—
6
—
Typ.
4.5
1
—
3.0
0
–12
12
–2
–5
5
8
—
Max.
6.0
5
100
3.5
0.3
—
—
—
—
—
10
5
Unit
V
µA
µA
V
V
mA
mA
mA
mA
mA
mA
%
Integrated Silicon Solution, Inc.
VP009-1C
10/01/98
5
ISSI [ INTEGRATED SILICON SOLUTION, INC ]
