ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature
OperatingTemperature
Lead Soldering Temperature
-55°C to + 125°C
-30°Cto+100°C
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current
Power Dissipation
± 50mA
70mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BVCEO
Emitter-collector Voltage BVECO
Power Dissipation
80V
6V
150mW
POWER DISSIPATION
Total Power Dissipation
200mW
(derate linearly 2.67mW/°C above 25°C)
ELECTRICAL CHARACTERISTICS ( TA = 25°C Unless otherwise noted )
PARAMETER
MIN TYP MAX UNITS
TEST CONDITION
Input
Forward Voltage (VF)
1.2
1.4
V
IF = ± 10mA
Output
Collector-emitter Breakdown (BVCEO
( Note 2 )
)
80
6
V
V
IC = 1mA
Emitter-collector Breakdown (BVECO
)
IE = 100µA
Collector-emitter Dark Current (ICEO
)
100 nA
VCE = 40V
Coupled Current Transfer Ratio (CTR) (Note 2)
PS2505-1, PS2505-2, PS2505-4
80
600
0.3
%
V
± 5mAIF , 5V VCE
± 10mAIF , 2mAIC
Collector-emitter Saturation VoltageVCE (SAT)
Input to Output Isolation Voltage VISO 5300
7500
VRMS
VPK
See note 1
See note 1
Input-output Isolation Resistance RISO 5x1010
Ω
VIO = 500V (note 1)
Output Rise Time tr
Output Fall Time tf
3
5
µs
µs
VCC = 10V ,
IC= 2mA, RL= 100Ω
Note 1
Note 2
Measured with input leads shorted together and output leads shorted together.
Special Selections are available on request. Please consult the factory
15/4/03
DB92393m-AAS/A4
ISOCOM [ ISOCOM COMPONENTS ]
