ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature
OperatingTemperature
-55°C to + 125°C
-30°Cto+100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current
Reverse Voltage
Power Dissipation
50mA
6V
70mW
OUTPUT TRANSISTOR
Collector-emitterVoltageBVCEO
Emitter-collector Voltage BVECO
Power Dissipation
40V
6V
150mW
POWER DISSIPATION
Total Power Dissipation
200mW
(derate linearly 2.67mW/°C above 25°C)
ELECTRICAL CHARACTERISTICS ( TA = 25°C Unless otherwise noted )
PARAMETER
MIN TYP MAX UNITS
TEST CONDITION
Input
Forward Voltage (VF)
1.2
1.4
10
V
IF = 10mA
Reverse Current (IR)
µA
V
VR =4V
Output
Collector-emitterBreakdown(BVCEO
)
40
6
IC =0.5mA
IE = 100µA
( Note 2 )
Emitter-collector Breakdown (BVECO
)
V
Coupled Current Transfer Ratio (CTR) (Note 2)
200 2000
%
1mAIF,2VVCE
1mA IF, 2mAIC
Collector-emitterSaturationVoltageVCE(SAT)
1.0
V
Input to Output Isolation Voltage VISO 5300
7500
VRMS
VPK
See note 1
See note 1
Input-output Isolation Resistance RISO 5x1010
Ω
VIO = 500V (note 1)
Output Rise Time tr
60
53
300 µs
250 µs
VCE =2V,
IC =10mA,RL=100Ω
Output Fall Time
tf
Note 1
Note 2
Measured with input leads shorted together and output leads shorted together.
Special Selections are available on request. Please consult the factory.
DB92306m-AAS/A8
30/4/03
ISOCOM [ ISOCOM COMPONENTS ]
