ELECTRICAL CHARACTERISTICS ( TA= 25°C Unless otherwise noted )
PARAMETER
MIN TYP MAX UNITS
TEST CONDITION
Input
Forward Voltage (VF)
1.2
1.5
10
V
IF = 10mA
ReverseCurrent(IR)
μA
VR =6V
Output
Collector-emitter Breakdown (BVCER
H11D1, H11D2
)
)
300
200
V
V
I = 1mA, RBE = 1MΩ
H11D3, H11D4
(Cnote 2 )
Collector-base Breakdown (BVCBO
H11D1, H11D2
)
300
200
6
V
V
V
IC = 100μA
IE = 100μA
H11D3, H11D4
Emitter-collector Breakdown (BVECO
Collector-emitter Dark Current (ICER
H11D1, H11D2
)
100 nA
250 μA
VCE = 200V,RBE=1MΩ
V = 200V,RBE=1MΩ,
TAC=E 100°C
H11D3, H11D4
100 nA
250 μA
VCE = 100V,RBE=1MΩ
V = 100V,RBE=1MΩ,
TAC=E 100°C
Coupled Current Transfer Ratio (CTR)
Collector-emitter Saturation VoltageVCE(SAT)
20
%
10mA IF , 10V VCE ,
RBE = 1MΩ
10mA IF , 0.5mA IC ,
RBE = 1MΩ
See note 1
See note 1
VIO = 500V (note 1)
VCC = 10V, I = 2mA,
RL = 100Ω ,Cfig 1
0.4
V
Input to Output Isolation Voltage VISO 5300
7500
Input-output Isolation Resistance RISO 5x1010
VRMS
V
ΩPK
μs
Turn-on Time
Turn-off Time
ton
toff
5
5
μs
Note 1
Note 2
Measured with input leads shorted together and output leads shorted together.
Special Selections are available on request. Please consult the factory.
VCC
Input
ton
toff
RL = 100Ω
tf
tr
Output
Output
10%
10%
90%
90%
FIG 1
DB91077m-AAS/A3
14/8/08
ISOCOM [ ISOCOM COMPONENTS ]
