Holding Current vs. Ambient
Temperature
Transient thermal impedance ( °C / Watt )
10000
4000
2000
1000
400
200
100
40
20
10
R
GK
=300
Ω
1k
Ω
Normalized to
V
AK
= 50V
R
GK
=10k
Ω
T
A
= 25 °C
1000
Maximum Transient Thermal Impedence
1. Lead temperature measured at the
widest portion of the SCR anode lead.
400
2. Ambient temperature measured at
200
a point 1/2" from the device
.
Holding current I
H
(
µ
A)
100
40
20
10
4
2
1
0.001
Junction to ambient
n to lea
d
27k
Ω
56k
Ω
-60 -40 -20
0
20 40 60
80 100 120
0.01
0.1
1 2 4 10
Junctio
10k
Ω
100
Ambient temperature T
A
( °C )
Off State Forward Current vs.
Ambient Temperature
Normalized forward current off state ( I
D
)
Maximum allowable temperature ( °C )
10000
4000
2000
1000
400
200
100
40
20
10
4
2
1
0
25
50
75
100
Ambient temperature T
A
( °C )
dV/dt vs. Ambient temperature
1000
400
100
40
10
4
1
0.4
0.1
25
50
75
100
0
Ambient temperature T
A
( °C )
27k
Ω
56k
Ω
1k
Ω
10k
Ω
R
GK
=300
Ω
2
Junction temperature = 100°C
Time (seconds)
On State Current vs. Maximum
Allowable Temperature
100
90
80
70
60
50
40
30
20
10
0
0
0.2
0.4
0.6
0.8
On state current (
Α
)
1.0
1.
2.
3.
4.
1. Ambient temp. half-sine wave avg
2. Ambient temp. DC current
3. Anode lead temp. half-sine wave avg
4. Anode lead temp. DC current
Normalized to
V
AK
= 50V
T
A
= 25 °C
V
AK
= 400V
V
AK
= 200V
V
AK
= 50V
Critical rate of rise applied forward voltage dV/dt (V/
µ
s)
On State Characteristics
1
0.4
On state current I
T
(A)
0.2
0.1
0.04
0.02
0.01
Junction temperature = 25°C
Increases to forward
breakover voltage
1
2
3
On state voltage V
T
( V )
4
5/12/00
DB92010-AAS/A4
ISOCOM [ ISOCOM COMPONENTS ]
