Holding Current vs. Ambient
Temperature
Maximum Transient Thermal Impedence
10000
1000
1. Lead temperature measured at the
widest portion of the SCR anode lead.
2. Ambient temperature measured at
a point 1/2" from the device.
Normalized to
VAK = 50V
=10kΩ
TAGK= 25 °C
400
200
4000
2000
RGK =300Ω
1kΩ
R
Junction to ambient
100
1000
40
400
200
100
10kΩ
27kΩ
20
10
4
40
20
10
56kΩ
2
1
-60 -40 -20
0
20 40 60 80 100 120
0.001 0.01
0.1
1 2 4 10
100
Ambient temperature TA ( °C )
Time (seconds)
Off State Forward Current vs.
Ambient Temperature
On State Current vs. Maximum
Allowable Temperature
10000
4000
2000
1000
100
90
1. Ambient temp. half-sine wave avg
2. Ambient temp. DC current
3. Anode lead temp. half-sine wave avg
4. Anode lead temp. DC current
Normalized to
V
= 50V
TAAK= 25 °C
80
70
400
200
100
60
50
VAK = 400V
VAK = 200V
40
30
20
VAK = 50V
40
20
10
4
2
1
10
0
1. 2.
0.4
3.
4.
0.8
0
25
50
75
100
0
0.2
0.6
1.0
Ambient temperature TA ( °C )
On state current ( Α )
On State Characteristics
dV/dt vs. Ambient temperature
2
1000
400
RGK =300Ω
1
0.4
0.2
0.1
100
40
1kΩ
10kΩ
27kΩ
10
4
0.04
0.02
0.01
1
0.4
Increases to forward
breakover voltage
56kΩ
0.1
25
50
75
100
0
1
2
3
4
Ambient temperature TA ( °C )
On state voltage VT ( V )
5/12/00
DB91033-AAS/A3
ISOCOM [ ISOCOM COMPONENTS ]
