Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
TIP41
TIP41A
V
CEO(SUS)
Collector-emitter
sustaining voltage
TIP41B
TIP41C
V
CEsat
V
BE
Collector-emitter saturation voltage
Base-emitter on voltage
TIP41
TIP41A
I
CES
Collector
cut-off current
TIP41B
TIP41C
TIP41/41A
I
CEO
Collector
cut-off current
TIP41B/41C
I
EBO
h
FE-1
h
FE-2
f
T
Emitter cut-off current
DC current gain
DC current gain
Transiton frequency
I
C
=6A; I
B
=0.6A
I
C
=6A ; V
CE
=4V
V
CE
=40V; V
EB
=0
V
CE
=60V; V
EB
=0
I
C
=30mA; I
B
=0
CONDITIONS
TIP41/41A/41B/41C
MIN
40
60
TYP.
MAX
UNIT
V
80
100
1.5
2.0
V
V
0.4
V
CE
=80V; V
EB
=0
V
CE
=100V; V
EB
=0
V
CE
=30V; I
B
=0
0.7
V
CE
=60V; I
B
=0
V
EB
=5V; I
C
=0
I
C
=0.3A ; V
CE
=4V
I
C
=3A ; V
CE
=4V
I
C
=0.5A ; V
CE
=10V
30
15
3
75
1.0
mA
mA
mA
MHz
2
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
