Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
・With
TO-3PN package
・Complement
to type TIP36/36A/36B/36C
・DC
current gain h
FE
=25(Min)@I
C
=1.5A
APPLICATIONS
・Designed
for use in general purpose
power amplifier and switching applications.
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
TIP35/35A/35B/35C
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Ta=
℃)
SYMBOL
PARAMETER
TIP35
TIP35A
V
CBO
Collector-base voltage
TIP35B
TIP35C
TIP35
TIP35A
V
CEO
Collector-emitter voltage
TIP35B
TIP35C
V
EBO
I
C
I
CM
I
B
P
C
T
j
T
stg
Emitter-base voltage
Collector current
Collector current-peak
Base current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open collector
Open base
80
100
5
25
40
5
125
150
-65~150
V
A
A
A
W
℃
℃
Open emitter
80
100
40
60
V
CONDITIONS
VALUE
40
60
V
UNIT
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
MAX
1.0
UNIT
℃/W
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
