Inchange Semiconductor
Product Specification
Silicon PNP Darlington Power Transistors
DESCRIPTION
・With
TO-220C package
・DARLNGTON
・High
DC durrent gain
・Low
collector saturation voltage
・Complement
to type TIP120/121/122
APPLICATIONS
・Designed
for general–purpose amplifier
and low–speed switching applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
TIP125/126/127
Absolute maximum ratings(Tc=25
℃
)
SYMBOL
PARAMETER
TIP125
V
CBO
Collector-base voltage
TIP126
TIP127
TIP125
V
CEO
Collector-emitter voltage
TIP126
TIP127
V
EBO
I
C
I
CM
I
B
P
C
T
j
T
stg
Emitter-base voltage
Collector current-DC
Collector current-Pulse
Base current-DC
T
C
=25℃
Collector power dissipation
T
a
=25℃
Junction temperature
Storage temperature
2
150
-65~150
℃
℃
Open collector
Open base
Open emitter
CONDITIONS
VALUE
-60
-80
-100
-60
-80
-100
-5
-5
-8
-120
65
W
V
A
A
mA
V
V
UNIT