Inchange Semiconductor
Product Specification
Silicon NPN Darlington Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
TIP120
V
CEO(SUS)
Collector-emitter
sustaining voltage
TIP121
TIP122
V
CEsat-1
V
CEsat-2
V
BE
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter on voltage
TIP120
I
CBO
Collector
cut-off current
TIP121
TIP122
TIP120
TIP121
I
C
=3A ,I
B
=12mA
I
C
=5A ,I
B
=20mA
I
C
=3.0A ; V
CE
=3V
V
CB
=60V, I
E
=0
V
CB
=80V, I
E
=0
V
CB
=100V, I
E
=0
I
C
=0.1A, I
B
=0
CONDITIONS
TIP120/121/122
MIN
60
80
100
TYP.
MAX
UNIT
V
2.0
4.0
2.5
V
V
V
0.2
mA
I
CEO
I
EBO
h
FE-1
h
FE-2
C
ob
导�½�
半
ND
固电
ICO
SEM
GE
HAN
INC
V
CE
=30V, I
B
=0
V
CE
=40V, I
B
=0
V
CE
=50V, I
B
=0
V
EB
=5V; I
C
=0
Collector
cut-off current
TIP122
Emitter cut-off current
DC current gain
DC current gain
Output capacitance
I
C
=0.5A ; V
CE
=3V
I
C
=3.0A ; V
CE
=3V
I
E
=0 ; V
CB
=10V,f=0.1MHz
OR
CT
U
0.5
2
mA
mA
1000
1000
200
pF
2
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
