Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
CEO(SUS)
V
CEsat-1
V
CEsat-2
V
BE
I
CEO
I
CEX
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
PARAMETER
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
CONDITIONS
I
C
=-0.2A ;I
B
=0
I
C
=-4A ;I
B
=-0.4A
I
C
=-10A ;I
B
=-3.3A
I
C
=-4A ; V
CE
=-4V
V
CE
=-30V; I
B
=0
V
CE
=-70V; V
BE(off)
=-1.5V
T
C
=150℃
V
CB
=-70V; I
E
=0
T
C
=150℃
V
EB
=-5V; I
C
=0
I
C
=-4A ; V
CE
=-4V
I
C
=-10A ; V
CE
=-4V
I
C
=-0.5A ; V
CE
=-10V
20
5.0
2.0
MIN
-60
MJE2955T
TYP.
MAX
UNIT
V
-1.1
-8.0
-1.8
-0.7
-1.0
-5.0
-1.0
-10
-5.0
100
V
V
V
mA
mA
mA
mA
MHz
2
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
