Thyristors
INCHANGE
MCR100-6
FEATURES
·With
TO-92 package
·Sensitive
gate trigger current
·Low
reverse and forward blocking current
·Low
holding current
QUICK REFERENCE DATA
SYMBOL
V
DRM
V
RRM
I
T(AV)
P
GM
P
G(AV)
I
TSM
T
stg
PARAMETER
Repetitive peak off-state voltage
Repetitive peak off-state voltage
Average on-state current
Peak gate power
Average gate power
Non-repetitive peak on-state current
Storage temperature range
MIN
400
400
1
0.1
0.01
10
-45-150
UNIT
V
V
A
W
W
A
℃
LIMITING VALUES
Limiting values in accordance with the absolute maximum system(IEC 134)
SYMBOL
PARAMETER
CONDITIONS
MIN
MAX
UNIT
V
DRM
V
RRM
I
RRM
I
DRM
I
GT
V
TM
I
H
V
GT
Repetitive peak off-state voltage
Repetitive peak reverse voltage
Repetitive peak reverse current
Repetitive peak off-state current
Gate trigger current
On-state voltage
Holding current
Gate trigger voltage
I
D
=0.1mA
I
D
=0.5mA
V
RRM
=400V
V
DRM
=400V
400
400
10
10
10
120
1.7
5
0.4
0.8
V
V
μA
μA
μA
V
mA
V
V
D
=6V; R
L
=100Ω
I
T
=1A
I
T
=0.1A ,I
GT
=12mA
V
D
=6V ; R
L
=100Ω
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
