MOSFET
INCHANGE
IRF630
N-channel mosfet transistor
Features
・With
TO-220 package
・Low
on-state and thermal resistance
・Fast
switching
・V
DSS
=200V; R
DS(ON)
≤0.4Ω;I
D
=9A
・1.gate
2.drain 3.source
123
Absolute Maximum Ratings Tc=25℃
SYMBOL
V
DSS
V
GS
I
D
P
tot
T
j
T
stg
PARAMETER
Drain-source voltage (V
GS
=0)
Gate-source voltage
Drain Current-continuous@ TC=25℃
Total Dissipation@TC=25℃
RATING
200
±20
9
74
150
UNIT
V
V
A
W
℃
℃
SYMBOL
ES
ANG
Tc=25℃
CH
Electrical Characteristics
IN
PARAMETER
固电
Max. Operating Junction temperature
Storage temperature
导�½�
半
-65~150
ON
MIC
E
CONDITIONS
OR
DUT
MIN
MAX
TO-220
UNIT
V
(BR)DSS
V
GS(TH)
R
DS(ON)
I
GSS
I
DSS
V
SD
Drain-source breakdown voltage
Gate threshold voltage
Drain-source on-stage resistance
Gate source leakage current
Zero gate voltage drain current
Diode forward voltage
V
GS
=0; I
D
=0.25mA
V
DS
= V
GS
; I
D
=1mA
V
GS
=10V; I
D
=5.4A
V
GS
=
±20V
;V
DS
=0
V
DS
=200V; V
GS
=0
I
F
=9A; V
GS
=0
200
2
4
400
±100
V
V
mΩ
nA
uA
V
10
1.2
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
