INCHANGE Semiconductor
isc
Product Specification
isc N-Channel MOSFET Transistor
IRF630A
DESCRIPTION
·Drain
Current –I
D
=9A@ T
C
=25℃
·Drain
Source Voltage-
: V
DSS
= 200V(Min)
·Static
Drain-Source On-Resistance
: R
DS(on)
= 0.4Ω(Max)
·Fast
Switching Speed
·Low
Drive Requirement
APPLICATIONS
·This
device is n-channel, enhancement mode, power MOSFET
designed especially for high power, high speed applications,
such as switching power supplies,UPS, AC and DC motor con-
trols, relay and solenoid drivers and high energy pulse circuits.
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
SYMBOL
V
DSS
V
GS
I
D
P
tot
T
j
T
stg
ARAMETER
Drain-Source Voltage (V
GS
=0)
Gate-Source Voltage
Drain Current-continuous@ TC=25℃
Total Dissipation@TC=25℃
Max. Operating Junction Temperature
Storage Temperature Range
VALUE
200
±30
9
72
150
-55~150
UNIT
V
V
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
R
th j-a
PARAMETER
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
MAX
1.74
62.5
UNIT
℃/W
℃/W
isc Website：www.iscsemi.cn
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
