Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BUV27
DESCRIPTION
·
·With TO-220C package
·Low collector saturation voltage
·Fast switching speed
APPLICATIONS
·For use in high frequency and efficiency
converters,switching regulators and motor
control
PINNING
PIN
1
DESCRIPTION
Base
Collector;connected to
mounting base
2
3
Emitter
Absolute maximum ratings (Tc=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
CONDITIONS
Open emitter
VALUE
UNIT
V
240
Open base
120
V
Open collector
7
12
V
Collector current (DC)
Collector current (peak)
Base current
A
ICM
20
A
IB
4
A
IBM
Base current (peak)
6
A
Ptot
Total power dissipation
Max.operating junction temperature
Storage temperature
TC=25℃
85
W
℃
℃
Tj
175
-65~175
Tstg
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Thermal resistance junction case
1.76
℃/W
Rth j-case
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
