Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BU508AFI
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
VCEO(SUS)
V(BR)EBO
VCEsat
VBEsat
hFE
PARAMETER
CONDITIONS
MIN
700
10
TYP.
MAX
UNIT
Collector-emitter sustaining voltage IC=100mA ;IB=0,
V
V
V
V
Emitter-base breakdown voltage
IE=10mA ;IC=0
Collector-emitter saturation voltage IC=4.5A ;IB=2 A
1.0
1.3
Base-emitter saturation voltage
DC current gain
IC=4.5A ;IB=2 A
IC=1A; VCE=5V
8
V
CE=1500V; VBE=0
1.0
2.0
ICES
Collector cut-off current
Emitter cut-off current
Transition frequency
Storage time
mA
mA
TC=125℃
IEBO
VEB=5V; IC=0
0.1
fT
IC=0.1A; VCE=5V;f=5MHz
7
7
MHz
μs
ts
IC=4.5A ; VCC=140V
IB=1.8A; LC=0.9mH
LB=3μH
tf
Fall time
0.55
μs
2
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
