INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
BU508A
DESCRIPTION
·Collector-Emitter
Sustaining Voltage-
: V
CEO(SUS)
= 800V (Min)
·High
Power Dissipation-
: P
D
= 125W@T
C
= 25
℃
APPLICATIONS
·Designed
for use in large screen color deflection circuits.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
VALUE
UNIT
V
CES
Collector- Emitter Voltage(V
BE
= 0)
1500
V
V
CEO
Collector-Emitter Voltage
800
V
V
EBO
Emitter-Base Voltage
5
V
I
C
Collector Current- Continuous
8
A
I
CM
Collector Current-Peak
15
A
I
B
Base Current- Continuous
4
A
I
BM
Base Current-Peak
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
6
A
P
C
125
W
℃
℃
T
J
150
T
stg
Storage Temperature Range
-65~150
SYMBOL
PARAMETER
MAX
UNIT
℃/W
R
th j-c
Thermal Resistance,Junction to Case
1.0
isc website：www.iscsemi.cn
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ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
