Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
BD434/436/438
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
-0.5
-0.6
-1.1
-1.2
UNIT
BD434/436
BD438
BD434/436
BD438
BD434
BD436
BD438
BD434
BD436
BD438
BD434
BD436
BD438
Collector-emitter
saturation voltage
VCEsat
IC=-2A; IB=-0.2A
-0.2
V
VBE
Base-emitter on voltage
IC=-2A ; VCE=-1V
IC=-0.1A; IB=0
V
V
-22
-32
-45
Collector-emitter
sustaining voltage
VCEO(SUS)
VCB=-22V; IE=0
VCB=-32V; IE=0
ICES
Collector cut-off current
Collector cut-off current
-100
-100
μA
V
CB=-45V; IE=0
VCE=-22V; VBE=0
VCE=-32V; VBE=0
ICES
μA
V
CE=-45V; VBE=0
IEBO
hFE-1
hFE-2
hFE-3
fT
Emitter cut-off current
DC current gain
VEB=-5V; IC=0
-1
mA
BD434/436
BD438
40
30
85
50
40
3
IC=-10mA ; VCE=-5V
IC=-0.5A ; VCE=-1V
IC=-2A ; VCE=-1V
IC=-250mA; VCE=-1V
130
140
DC current gain
BD434/436
BD438
DC current gain
Transition frequency
MHz
2
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
