Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
(BR)EBO
V
CEsat
V
BE
I
CBO
I
EBO
h
FE
f
T
PARAMETER
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
CONDITIONS
I
C
=0.1A; I
B
=0
I
E
=10mA; I
C
=0
I
C
=5 A;I
B
=0.5 A
I
C
=5A ; V
CE
=5V
V
CB
=150V; I
E
=0
V
EB
=5V; I
C
=0
I
C
=1A ; V
CE
=5V
I
C
=1A ; V
CE
=10V
55
20
MIN
150
5
TYP.
2SD845
MAX
UNIT
V
V
2.0
1.5
-50
-50
160
V
V
μA
μA
MHz
h
FE
classifications
R
55-110
O
80-160
2
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
