INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
V
CEO(SUS)
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
V
CE(
sat
)
V
BE(
sat
)
I
CBO
I
EBO
h
FE
f
T
C
OB
PARAMETER
Collector-Emitter Sustaining Voltage
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
CONDITIONS
I
C
= 1.0A ; I
B1
= 0.1A, L= 1mH
I
C
= 50μA; I
E
= 0
I
C
= 1mA; I
B
= 0
B
2SC3969
MIN
400
400
400
7
TYP.
MAX
UNIT
V
V
V
V
I
E
= 50μA; I
C
= 0
I
C
= 1A; I
B
= 0.2A
B
1.0
1.5
10
10
50
10
30
V
V
μA
μA
Current-Gain—Bandwidth Product
Output Capacitance
Switching times
t
on
t
stg
t
f
w
.cn
i
em
cs
.is
w
w
B
I
C
= 1A; I
B
= 0.2A
V
CB
= 400V; I
E
= 0
V
EB
= 7V; I
C
= 0
I
C
= 0.1A ; V
CE
= 5V
25
I
E
= -0.1A ; V
CE
= 10V
MHz
pF
I
E
= 0; V
CB
= 10V; f= 1.0MHz
Turn-on Time
Storage Time
Fall Time
I
C
= 0.8A ; I
B1
= -I
B2
= 0.08A;
R
L
= 250Ω;V
CC
≈
200V
1.0
2.5
1.0
μs
μs
μs
isc Website：www.iscsemi.cn
2
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
