Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3866
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
V(BR)CBO
V(BR)EBO
VCEsat
VBEsat
PARAMETER
CONDITIONS
MIN
800
900
10
TYP.
MAX
UNIT
V
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
IC=10mA , IB=0
IC=1mA , IE=0
IE=1mA , IC=0
IC=1A; IB=0.2A
IC=1A; IB=0.2A
VCB=900V; IE=0
VEB=10V; IC=0
IC=1A ; VCE=5V
V
V
1.0
1.5
1.0
1.0
V
V
ICBO
mA
mA
IEBO
Emitter cut-off current
hFE
DC current gain
10
Switching times
Turn-on time
1.0
4.0
0.8
μs
μs
μs
ton
IC=2A; IB1=0.4A
IB2=-0.8A;RL=150Ω
Pw=20μs,Duty≤2%
Storage time
Fall time
ts
tf
2
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
