Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3320
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
V(BR)CBO
V(BR)EBO
VCEsat
VBEsat
PARAMETER
CONDITIONS
MIN
400
500
7
TYP.
MAX
UNIT
V
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
IC=10mA ;IB=0
IC=1mA ;IE=0
IE=1mA ;IC=0
IC=6A; IB=1.2A
IC=6A ;IB=1.2A
VCB=500V; IE=0
VEB=7V; IC=0
IC=6A ; VCE=5V
V
V
1.0
1.5
1.0
1.0
V
V
ICBO
mA
mA
IEBO
Emitter cut-off current
hFE
DC current gain
10
Switching times resistive load
ton
ts
tf
Turn-on time
Storage time
Fall time
0.5
1.5
μs
μs
μs
IC=7.5A IB1=1.5A
IB2=-3A RL=20Ω
PW=20μs;Duty=<2%
0.15
2
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
