INCHANGE Semiconductor
iscRF Product Specification
isc Silicon NPN RF Transistor
2SC2736
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
V(BR)CBO
V(BR)CEO
V(BR)EBO
VCE(
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Collector Cutoff Current
DC Current Gain
CONDITIONS
MIN
30
20
3
TYP. MAX UNIT
IC= 10μA ; IE= 0
V
V
V
IC= 1mA ; RBE= ∞
IE= 10μA ; IC= 0
IC= 10mA ; IB= 5mA
VCB= 15V; IE= 0
0.7
0.5
200
V
)
sat
ICBO
μA
hFE
IC= 5mA ; VCE= 10V
IC= 5mA ; VCE= 10V
30
fT
Current-Gain—Bandwidth Product
Output Capacitance
1400 2200
MHz
pF
COB
CG
CG
NF
IE= 0 ; VCB= 10V;f= 1.0MHz
1.0
IC= 2mA ; VCC= 12V;f= 200MHz
OSC= 230MHz(0dBm)
Conversion Gain
22.5
10
dB
f
IC= 2mA ; VCC= 12V;f= 900MHz
fOSC= 930MHz(0dBm)
fout= 30MHz
Conversion Gain
dB
IC= 2mA ; VCC= 12V;f= 200MHz
fOSC= 230MHz(0dBm)
Noise Figure
4.0
dB
VOSC
Oscillating output voltage
Oscillating output voltage
IC= 7mA;VCC= 12V;fOSC= 300MHz
IC= 7mA;VCC= 12V;fOSC= 930MHz
300
200
mV
mV
VOSC
2
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ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
